| 摘要 |
PURPOSE:To stabilize the quantity of reflected light and to improve reliability by forming a thin indium antimony film on a substrate then subjecting the thin film to an inert gaseous plasma treatment successively thereto thereby stabilizing the thin film. CONSTITUTION:The thin In.Sb alloy film is formed to about 1,000Angstrom thickness by a sputtering method on the substrate which consists of an acrylic resin and has 300mm outside diameter and 1.2mm thickness. Such substrate is then set in a plasma device and is treated with gaseous argon (Ar) plasma. The treatment is executed by a method consisting in evacuating the inside of the plasma device by using a vacuum pump, then introducing the gaseous Ar into the device and inducing high-frequency discharge between a high-frequency electrode and a cathode and a cathode set with the substrate while maintaining the stationary state of 5X10<-3>Torr, thereby converting the gaseous Ar to the plasma. The In.Sb film can be stabilized by such treatment. The InNUSb record ing medium prepd. in the above-mentioned manner is stable in both writing level 9 and erasing level 10 from the beginning and the quantity of the reflected light does not fluctuate. |
