| 摘要 |
PURPOSE:To obtain a Schottky barrier gate type FET having excellent high frequency characteristic with good reproducibility by etching widely to the midway of an ohmic contact layer as compared with a gate width, and then etching to a channel layer in the gate width. CONSTITUTION:An N-type channel layer 9 and an N<+> type ohmic contact layer 10 are formed on the main surface of a wafer 7 made of a GaAs substrate. After a source electrode 1 and a drain electrode 2 are formed on the main surface of the wafer 7, with an insulating film 13 as a mask an ohmic contact layer 10 is etched to the midway in the width wider than a gate electrode forming region. Then, with an insulating film 15 as a mask the gate electrode forming region is etched to the surface layer of the layer 9. A gate electrode 3 is formed on the formed flat groove 16. Thus, a fine gate can be formed with good reproducibility, thereby obtaining a Schottky barrier gate FET having excellent high frequency characteristics.
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