| 摘要 |
PURPOSE:To obtain the high mass-production property at least ten times that in a conventional method by using an addition body obtained by equimolar mixture of dialkyl zinc and dialkyl selenium or dialkyl sulphur for a Zn source. CONSTITUTION:On a low-resistance N-type substrate, a blue light emitting element comprising the structure in which a low-resistance N-type ZnSe layer, an insulating layer, an electrode layer are laminated in order is fabricated. For a zinc source, an addition body obtained by equimolar mixture of dialkyl zinc and dialkyl selenium, or dialkyl sulphur is used. For an Se source, hydrogenated selenium is used. The low-resistance N-type ZnSe layer is fabricated by MOCVD. Then the high mass-production property ten times that in a conventional method can be obtained. |
