| 摘要 |
PURPOSE:To enable the accurate deposition of an Si or Ge film to the exposed part of a substrate, by forming a fine pattern of an Si or Ge film accurately to the desired part of a substrate. CONSTITUTION:An SiO2 film 5 is formed on the surface of an Si (100) single crystal substrate 4, and a square opening is opened to the SiO2 film 5 by photolithography or reactive ion-etching process to expose the surface of the Si substrate 4. Si is deposited to the substrate by electron beam evaporation apparatus to form a deposited Si film 6 until the thickness of the deposited film becomes equal to that of the SiO2 film 5. The Si film 6 is formed exclusively between the SiO2 films and there is no generation of polycrystalline Si on the SiO2 film.
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