| 摘要 |
PURPOSE:To enable the epitaxial growth of an element at a low temperature, by irradiating the surface of a specimen substrate with light having a wavelength effective to the rearrangement of the surface layer atoms during the vacuum-evaporation of the element. CONSTITUTION:One or more kinds of elements are evaporated by the electron gun 71 and deposited on the specimen substrate 81 placed in the vacuum chamber 32 to form a thin film consisting of monoatomic layer. One or more kinds of elements different from those used in the preceding deposition process are evaporated by the electron gun 71 and deposited on the monoatomic layer to an extent to form a monoatomic layer. A semiconductor thin film can be formed on the substrate 81 by repeating the above process several times. In the course of the above operation, the surface of the substrate 81 is irradiated with light (e.g. laser beam) effective to the rearrangement of the surface layer atoms through the window 22 from the light source 61 placed outside of the vacuum chamber 32.
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