| 摘要 |
PURPOSE:To enable the uniform heating of a wafer and the prevention of the surface contamination of the wafer, by forming a holder using a radiation- transmitting material and placing a reheater opposite to the other surface of the holder. CONSTITUTION:The wafer 12 is heated with the radiation generated from the heat source 7, a reaction gas is supplied to the reaction chamber 4, and an epitaxial film is formed on the surface of the wafer 12. In the above process, the radiation generated from the heat source 7 and used for the direct heating of the wafer 12 is transmitted through the wafer 12 and the holder 11 to the heater 13, which is heated in red-hot state by the radiation. The heated heater 13 emits radiation to effect the reheating of the wafer 12 from the back-side of the holder 11.
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