摘要 |
An MOS transistor of second conductivity type is provided which is formed in a semiconductor substrate of first conductivity type and includes a first source region of second conductivity type, a first drain region of second conductivity type, and a gate electrode provided on a gate insulation layer. Further, an MOS transistor of first conductivity type is provided which is stacked on the MOS transistor of second conductivity type and includes a second source region, a second drain region and the gate electrode. The first and second source regions are connected to each other through a conductive layer which is selected from a given metal layer and a given metal silicide layer. |