METHOD FOR MEASURING SERIAL RESISTANCE OF ELECTRIC FIELD EFFECT TRANSISTOR

摘要

PURPOSE:To measure correctly the serial resistance of an FET by flowing the electric current in the Schottky forward direction between one side ohmic electrode and a gate electrode of an FET and dividing the electric potential difference between both ohmic electrodes by the Schottky forward direction electric current. CONSTITUTION:A Schottky forward direction electric current I is made to flow from an electric current measuring needle 7 for the gate electrode to an electric current measuring needle 9 for the source electrode. An electric potential difference VDS between an electric current measuring needle 8 for the source electrode and an electric measuring needle 10 for the drain electrode is equal to the voltage difference of both edges of a serial resistance RS. Consequently, the serial resistance RS can be obtained by dividing the voltage difference VDS by the electric current I. Since the contact resistance and the internal resistance of the gate electrode are removed, the highly accurate measurement can be executed.