| 摘要 |
PURPOSE:To improve a switching speed by a method wherein a voltage not so large as to saturate a whole domain of a channel is applied to the first gate electrode and a signal voltage which turns an MIS semiconductor element on and off is applied to the second gate electrode. CONSTITUTION:The first gate electrode 7 is formed on the source side of a channel and the second gate electrode 8 is so provided as to be larger than the electrode of a drain 6 of the channel. A voltage is always applied to the electrode 7. This voltage is applied in order to form a local channel 14 under the electrode 7 and its value is not so large as to saturate the whole channel. A signal voltage for turning an N-channel MOSFET on and off is applied to the electrode 8. A channel is formed or extinguished on the side of the drain 6 by the signal voltage applied to the electrode 8 and the MOSFET is turned on and off by that channel and the local channel 14.
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