| 摘要 |
PURPOSE:To make the side plane of an Au thin film pattern vertical by etching the Au thin film by ionization and acceleration of the mixed gas of a specified gas mixed with Ar. CONSTITUTION:After coating a substrate 1 with an Au thin film 2, a resist film pattern 3 is formed on that. By ion milling using the gas f C2F6 gas mixed with 10% (SCCM ratio) of Ar, the Au film 2 is etched with the resist film pattern 3 used as a mask. A plasma generator utilizing microwave resonance is used for generation of ions and ions 4 are extracted by an anode and are accelerated. An acceleration voltage is 800V and a vacuum degree of a sample chamber is 4X10<-4>Torr. After completion of etching, the resist film 3 remaining on the surface is removed and the desired Au thin film pattern 2' on the substrate 1 can be obtained. |
