| 摘要 |
PURPOSE:To prevent the breakdown of a cathode-emitter junction due to surge voltage while improving current cut-off capacitance by forming a region having breakdown voltage lower than the cathode-emitter junction to one part of the cathode-emitter junction. CONSTITUTION:A region A consisting of a P layer 16 having breakdown voltage lower than that of other sections of a cathode-emitter junction 17 is constituted to one part of the cathode-emitter junction 17 as a junction section between an N<+> layer and P<-> layer. Since the region A absorbs surge voltage by a breakdown, voltage more than breakdown voltage in the region A is not applied to the cathode-emitter junction 17, thus protecting the junction. |
