| 摘要 |
PURPOSE:To prevent the generation of crystal defect in the epitaxial silicon layer, by forming an aperture part on the insulative film formed on the substrate, making the grooves on the silicon region with aperture, forming the insulative film only on the side wall of the silicon groove, and forming selectively the silicon epitaxial growth layer only on the exposed silicon surface. CONSTITUTION:On the P-type single crystalline silicon substrate 1, the P-type layer 2 and the SiO2 film 3 are formed. Then the SiO2 film 3 is subjected to etching, the silicon groove 5 is formed, and the resist is eliminated. The SiO2 film is left thermal oxidation. The SiO2 film is left only on the side wall of the silicon groove by etching the SiO2 thin film 6 on the bottom surface of the silicon groove 5. Then, the silicon epitaxial layer 8 is deposited by adding HCl of about 1vol% to the gas system composed of SiH2Cl and H2. In the process of this epitaxial growth, the substrate 1 and the insulative film pattern for the element isolation region are composed of the same P-type single crystal silicon, so that the stress of the substrate and the isolation region is eased and the stacking fault of epitaxial silicon layer 8 is reduced. |
