| 摘要 |
PURPOSE:To realize the separation of adjacent transistors by a smaller occupied area by utilizing the side walls of a gate electrode for effecting the separation of the transistors. CONSTITUTION:A gate electrode 1 is formed on an element active region on a semiconductor substrate 4 and an impurity layer for isolation 5a is formed by using said gate electrode 1 as a mask. The surface of the layer 5a is coated with an insulating film 5 for isolation and is made flat. By anisotropic etching, the insulating film 5 deposited on the gate electrode 1 is removed to leave only the insulating film 5 present between the gate electrodes 1. The gate electrode 1 is patterned again to be made into a predetermined shape. As the final step, an impurity diffusion layer 2 is formed. Because the insulating film 5 as well as the gate electrode 1 functions as a mask, the impurity diffusion layer 2 can be obtained. |
