| 摘要 |
PURPOSE:To not only inhibit the diffusion of phosphorus to other layers from an ohmic contact layer but also increase the growth rate of the ohmic contact layer, and to improve the safety of a raw material gas by forming the ohmic contact layer out of N-type hydride amorphous silicon containing fluorine. CONSTITUTION:N-type hydride amorphous silicon containing fluorine is used as a material for an ohmic contact layer 6, and trifluoride silane containing phosphine is employed as a raw material gas for preparing N<+> a-Si:H:F, thus inhibiting a diffusion to source-drain electrodes 7, 8 of phosphorus, then increasing the growth rate of the ohmic contact layer 6. When an ohmic contact layer 5 is formed out of said material, the diffusion to the source-drain electrodes 7, 8 of phosphorus can be suppressed because the diffusion coefficient of phosphorus in N<+> a-Si:H:F is smaller than that of phosphorus in N<+> a-Si:H. The growth rate of the ohmic contact layer 6 is made faster than that at a time when using raw material gases except trifluoride silane, such as silane, hydrogen and tetrafluoride silica, etc. by several times. |
