| 摘要 |
PURPOSE:To provide an SiO2 film with even thickness by a method wherein, when an SiO2 film is formed on the surface of a semiconductor substrate using a plasma CVD equipment, an oxide film formed on the backside of substrate is removed and the backside is mounted on an electrode plate to form a new film. CONSTITUTION:The exposed surface and backside of an Si substrate 1 are respectively covered with an SiO2 film 2 and another SiO2 film 3. Now a new SiO2 film is produced on the surface of Si substrate 1 by plasma CVD method conforming to the procedures described as follows, i.e. a resist film 4 is provided only on the surface of SiO2 film 2 to remove not only the SiO2 film on the backside but also the SiO2 film stuck to the side by etching process using the resist film 4 as a mask. Next the resist film 4 is removed and the backside of substrate 1 having no SiO2 film at all is fixed to an electrode plate of CVD equipment to deposit a new SiO2 film on the film 2 as usual. Through these procedures, the substrate 1 and the electrode plate may be provided with excellent thermal conductivity to supply the substrate 1 with sufficiently high frequency power. |
