| 摘要 |
<p>PURPOSE:To form a thin-film transistor, in which an impurity does not diffuse from source-drain, that is, there is no OFF-leakage current, by using a semiconductor film hardly containing the impurity (0.01% or lower) as source-drain electrodes. CONSTITUTION:A source electrode 2, a gate insulating film 3, an amorphous semiconductor film 4 and a two-layer film of a microcrystalline silicon film 5 hardly containing an electrically active impurity such as phosphorus and a metallic electrode 6 in source and drain electrodes are shaped onto an insulating substrate 1. Since the microcrystalline silicon film 5 hardly contains the electrically active impurity such as phosphorus, the impurity does not diffuse into the amorphous semiconductor film 4 even when the temperature of the whole reaches a temperature of 200-300 deg.C on the formation of source-drain, thus also preventing the increase of the OFF-leakage currents of a transistor.</p> |
