| 摘要 |
PURPOSE:To improve the crystallinity of an epitaxial layer made to grow at a low temperature by a method wherein the epitaxial layer formed in an epitaxial growth at the low temperature is annealed for a short time at a temperature higher than the temperature of the epitaxial growth. CONSTITUTION:After an N<+> buried layer 2 is formed in an N-type Si substrate 1, an N<-> epitaxial layer 3 which can check auto-doping is made to grow at a relatively low temperature. Next, a tungsten-halogen lamp 4 being employed, rays 5 of light of an infrared lamp are applied for annealing for a shot time at a temperature higher than the temperature for forming the layer 3. Then, the formation of a P<+> region 7, etc. are conducted, so as to prepare a P<+>/N diode 10. By this method, the crystallinity of the epitaxial layer 3 can be improved.
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