Method of making edge-aligned implants and electrodes therefor

摘要

There is disclosed a process particularly suited for making CCD's. The process comprises the steps of (a) depositing a layer of conductive material above a semiconductor substrate; (b) forming a patterned mask above the conductive layer, the pattern exposing spaced-apart strip portions of the conductive layer; (c) ion-implanting dopant strips into the substrate through the conductive layer strip portions exposed by the patterned mask; (d) removing a portion of the mask but retaining the rest so as to expose the conductive layer over first portions of the substrate that contain an implanted dopant strip and over portions of the substrate adjacent to the first portions; (e) forming on the conductive layer between the retained mask portions, and above the implanted dopant strips, strips of a material resistant to an etchant for the conductive material; (f) removing the retained mask portions; and (g) etching away the conductive layer where the latter is not covered with the etchant-resistant material so as to leave conductive strips overlying the implanted strips.