发明名称 POLISHING METHOD FOR CRYSTAL
摘要 PURPOSE:To make possible the polishing of a crystal while measuring exactly the thickness thereof by making incident light to the crystal from the polished surface thereof, taking the reflected light from a reflection film again out of the polished surface and measuring the rotating angle of the plane of polarization with respect to the plane of polarization of the incident light. CONSTITUTION:The crystal 3 of the thick liquid phase epitaxial garnet film is adhered by using an adhesive agent 5 onto a polishing jig 7 as the reflection film 6 and the surface of the crystal 3 is polished, by which the adjustment of the crystal 3 is executed. Laser light 11 which is made to the linearly polar ized light by passing through a polarizing plate 21 is made incident at proper times to the crystal 3 from the polished surface thereof during the polishing and is passed through the crystal 3, the non-magnetic garnet substrate 4 and the adhesive agent 5 so as to be reflected on the surface of the chromium reflec tion film 6. The reflected light is again passed through the agent 5, the substrate 4 and the crystal 3 and is then taken out as exit light 12. The rotating angle of the plane of polarization of such exit light 12 with respect to the plane of polarization of the incident light is read with an analyzer 22 and the polishing is executed while the film thickness of the crystal 3 is monitored.
申请公布号 JPS61213611(A) 申请公布日期 1986.09.22
申请号 JP19850053481 申请日期 1985.03.19
申请人 NEC CORP 发明人 HIBIYA TAKETOSHI
分类号 B24B1/00;B24B49/00;G01B11/06 主分类号 B24B1/00
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