| 摘要 |
PURPOSE:To form a thin film on a large number of wafers by a batch processing without impairing the uniformity of a grown film by a method wherein the groups of wafers provided almost horizontally in vertical direction leaving a space between them are rotated and revolved at the same time, and reaction gas is radially run from the center axis direction of a reaction chamber. CONSTITUTION:The wafers placed on a plurality of wafer retaining devices 20 almost horizontally leaving a fixed interval are rotated by a rotating stand 1 and at the same time they are revolved. In the meantime, a prescribed thin film is formed on the wafers by the reaction gas running almost radially from a gas introducing device 30. It is desirable that the number of rotation of the rotating devices 12 and 14 is set in such a manner that the number of rotation of one of the rotating devices does not become the integral fold of the number of revolutions of other rotating device for the purpose of preventing the specific part of the wafers positioned periodically at the specific part. Besides, it is desired that the wafers are placed on the wafer retaining device with the desired face positioned facing downward for the purpose of reducing the adhesion of dust on the desired face of the wafers. |
