| 摘要 |
PURPOSE:To form the equivalent circuit to a diode having the characteristics equal to those of a PtSi/Si diode on the region of a smaller area by a method wherein the small-area and large-capacity and the small-area Schottky barrier diode of the diode are formed in parallel. CONSTITUTION:A capacitor part A and a Schottky barrier diode part B are formed of a P-type Si substrate 1, an N<+> type buried layer 2, an interelement isolation insulating film 3, an N-type epitaxial Si layer 4, a high-concentration doped N<+> type epitaxial Si layer 5, a Pd2 Si film 6, an SiO2 film 7, a Ta2O5 film 8, a W film 9 covering both of the diode and the capacitor, and an electrode 10 consisting of an Al thin film. As the specific inductivity of the Ta2O5 film 8 is large, the area of the capacitor part A is sufficient by about 1/3 of that of the capacitor part of a PtSi diode, and this diode using the Pd2 Si film shows the current-voltage characteristics equal to those of the PtSi diode even though the area thereof is reduced to about 1/10 of that of the PtSi diode. Accordingly, the semiconductor device having the capacity and electrical characteristics, while are equal to those of the PtSi diode, can be formed in an area of half or less of the area of the PtSi diode. |
