发明名称 SEMICONDUCTOR PRESSURE SENSOR
摘要 PURPOSE:To obtain an electrical signal corresponding to the measured pressure, by providing first and second shearing gauges near the surface and near the center of the thickness of a semiconductor diaphragm respectively to compute the difference between the outputs of the first and second shearing gauges. CONSTITUTION:A first shearing gauge 3 is provided near the surface of a semiconductor diaphragm 2 while a second shearing gauge 4 near the center of thickness thereof 2. When a measured pressure Pm is applied on the diaphragm 2, a measuring stress is generated in the diaphragm 2. There is a residual stress in the diaphragm 2 as generated during the manufacture or the like. In this case, an electrical signal corresponding to the measured pressure Pm can be obtained by computing the difference between the outputs of the gauges 3 and 4.
申请公布号 JPS61212739(A) 申请公布日期 1986.09.20
申请号 JP19850053642 申请日期 1985.03.18
申请人 YOKOGAWA ELECTRIC CORP 发明人 HIRATA TERUTAKA;YAMAGUCHI MASAAKI;OSHIMA TADASHI;AGA TOSHIO;MIYAJI NOBUO
分类号 G01L9/04;G01L9/00 主分类号 G01L9/04
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