| 摘要 |
PURPOSE:To make the formation of a thin film having good quality possible by separating a thin film forming part and drying etching part within the same vacuum vessel and executing separately the formation of the thin film and ion etching in the stage of forming the thin film on a substrate having a step by sputtering. CONSTITUTION:A moving device 71 for a substrate holding part 72 is provided in the vacuum vessel 1 and the vessel is separated to the 1st space 2 and the 2nd space by a partition wall 13. The inside of the vacuum vessel 1 is evacuated to a high vacuum by a evacuation pipe 11 and gaseous Ar is supplied under a low pressure into the vessel through an intake pipe 12. The holding part 72 is moved by the moving means 71 so that the substrate on the holding part 72 is moved back and forth between the 1st space and the 2nd space. A sputtering electrode 31 attached with an SiO2 target 32 is provided to the 1st space and an electrode 51 for drying etching is provided to the 2nd space. The electrodes are respectively connected to separate high-frequency power sources 33, 53. Since both spaces are electrically shielded by the partition wall 13, the formation of the thin film in the 1st space and the ion etching in the 2nd space are separately executed without the interference of the electric fields with each other. The formation of the thin film having no steps and cracks is thus made possible.
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