| 摘要 |
PURPOSE:To reduce a leaking current between first electrode films, by embedding a semiconductor film constituting one of neighboring photoelectric conversion elements in a dividing groove between the first electrode films and extending the semiconductor film on the first electrode film of the other photoelectric conversion element. CONSTITUTION:On one main surface of substrate 1, an amorphous semiconductor film 3 and a first back-surface electrode film 41 are deposited so as to cover transparent conducting films 2a, 2b..., which are divided in correspondence with photoelectric conversion elements 5a, 5b... continously. The neighboring photoelectric conversion elements 5a, 5b... are connected in series by neighboring interval parts 6.... The amorphous semiconductor films 3... and the first back-surface electrode films 41' are removed by the projection of a laser beam from the other main-surface side of the substrate. The semiconductor film 3a in one photoelectric conversion element 5a is embedded in a dividing groove 7 between the transparent conducting films 2a and 2b. The terminating end of the film 3a is extended on the other transparent conducting film 2b. A second back-surface electrode film 42 is deposited and overlapped by the projection of the laser beam from the other main-surface side of the substrate 1. The second back-surface electrode 42a and 42b and the first back-surface electrode 41a and 41b are divided for every regions of the photoelectric conversion regions 5a and 5b. |
