| 摘要 |
PURPOSE:To improve the positioning precision by using as the mask pattern an opening pattern comprising a combination of rectangles which are spaced apart from each other. CONSTITUTION:An SiO2 film 12 as mask material is formed on a substrate 11, a resist 13 is formed thereon by coating, and a resist pattern 13a necessary for forming a desired mask shape is formed. The pattern 13a is an opening pattern which comprises two rectangular patterns spaced apart from each other and orthogonally arranged. With the pattern 13a as a mask the film 12 is removed via etching, thereafter the resist 13 is peeled and removed, and then anisotropic etching is performed using KOH thereby to form a mark 14 shaped in a V-like trench. Since there is no L-shaped corner in the mask pattern 12a, the shape of the mark 14 has no pattern distortion and becomes a quasi-L-letter faithful to the pattern 12a. With this, the positioning precision improves. |
