发明名称 VACUUM DEPOSITION METHOD
摘要 PURPOSE:To capture the lumped solid matter jumping out of a vacuum deposition source and to form a uniform and clean thin film by providing a partition plate mechanism between the vapor deposition source and a substrate to be worked and controlling selectively the film forming particles which are different in evaporation rate. CONSTITUTION:The partition plates 1, 1 which move in an arrow direction are provided between the vapor deposition source and the substrate to be formed with the film (not shown) to control selectively the film forming particles A, B evaporating at different rates from the vapor deposition source in a vacuum deposition method, by which the thin film is formed. As a result, the particles B slower than Vmin designated by the equation Vmin=Vt.l/d at the moving speed Vt of the plates 1, 1 in the arrow 6 direction, space (d) and length lthereof stick to the plate 1 and cannot pass therebetween. The lumped solid matter which is the foreign matter in the film is large and low in speed and is therefore surely captured by the plates.
申请公布号 JPS61210174(A) 申请公布日期 1986.09.18
申请号 JP19850050989 申请日期 1985.03.14
申请人 FUJITSU LTD 发明人 WAKITANI MASAYUKI;YOSHIMI TAKUYA;ENDO TETSURO;SATO KIYOTAKE;MIURA TERUNOBU
分类号 B41M5/26;C23C14/24;G11B7/26 主分类号 B41M5/26
代理机构 代理人
主权项
地址