| 摘要 |
PURPOSE:To improve production efficiency by heat-treating photoresist and then etching and tapering an insulating layer by ion milling at such an angle of incidence of ions that the sum of the angle of a photoresist end part and the angle of ion incidence is <=90 deg.. CONSTITUTION:Photoresist is applied over the 2nd insulating layer 5 which is flattened, and heat-treated at about 130 deg.C for 30min. This heat-treated resist cures to become hemispherical and the flank angle beta of the resist at this time is about 45 deg.. Then, the sample in this state is etched and tapered by ion milling on condition of 1.5X10<-4>Torr gaseous Ar pressure, a 0.4KV acceleration voltage, and 0.5mA/cm<2> electromagnetic density, and then ion beams are free from shadow effect because the side wall angle of the resist is 45 deg.. Consequently, the etched taper is linear at about 45 deg.. When an upper magnetic body 9 is formed by sputtering, vapor-deposition, etc., on the insulating layer formed as mentioned above, there is no abrupt thin film reduction on the tapered surface and magnetic saturation is hard to occur, so the recording and reproduction efficiency is improved.
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