发明名称 PHOTOCHEMICAL VAPOR DEPOSITION METHOD
摘要 PURPOSE:To prevent dispersion of a formed film thickness by a method wherein the time taken to form film is controlled by comparing light intensity before incidence to a reaction vessel with respective light intensity passing through the reaction vessel before or after light absorption raw gas is introduced to the reaction vessel. CONSTITUTION:Laser beam 2 injected from light source 1 comes into a reaction vessel 3 from an irradiation aperture 4 installed to the reaction vessel 3, then gets out again through an irradiation aperture 5. The laser beam intensity before incidence to the vessel 3 is detected by an optical sensor 7 through a mirror 6 and the laser beam intensity injected from the vessel 3 detected by an optical sensor 8, then both said intensities are compared. Fixed quantity of raw gas is supplied to the vessel 3 from an intake vent 9 and is evacuated from an exhaust vent 10. The detective signal of the optical sensors 7, 8 are introduced to a forming film time setting device 14 and said device 14 controls generation time of the laser light source 1. Thereby, film thickness control can be performed easily and dispersion of film thickness can be decreased.
申请公布号 JPS61210618(A) 申请公布日期 1986.09.18
申请号 JP19850050449 申请日期 1985.03.15
申请人 HITACHI LTD 发明人 TSUJIKU SUSUMU;NISHITANI EISUKE;INABA HIROSHI;NAKATANI MITSUO;SHINTANI AKIRA
分类号 H01L21/205;H01L21/263;H01L21/285 主分类号 H01L21/205
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