| 摘要 |
PURPOSE:To ensure butting connection of bump electrodes and the corresponding terminal electrodes of a substrate, by compressing and heating the surfaces of a plurality of the bump of electrodes formed by a selective plating method by the flat substrate so as to fuse the surfaces, and making the heights of the plurality of the bump electrodes uniform. CONSTITUTION:Signal input parts 22 are formed on the surface of a CCD substrate 21. An insulating film 23 and a polyimide film 24 are formed thereon. A contact electrode comprising an Al film is formed in each signal input part 22. Thereafter, a Ti film 26-1 and a Cu film 262 are sequentially evaporated and a base metal film 26 is formed. Then, a Cu layer 27 and an In layer 28 are formed by a selective plating method with a photoresist pattern as a mask. After a bump electrode is formed, the CCD substrate 21 is chucked by vacuum by using a compressing device having high parallelism. As a flat substrate, e.g., an Si substrate is chucked by vacuum so as to face the CCD substrate 21. The device is heated in a forming gas atmosphere and compressed under specified pressure for several minutes. The surface of the bump electrode is fused. Then the CCD substrate 21 and the Si substrate 29 are separated. Thus the bump electrodes having the same height are formed. |
