| 摘要 |
PURPOSE:To form a tungsten film having excellent adhesiveness to an insulating film on a substrate by irradiating UV light of a suitable wavelength to a gaseous raw material consisting of gaseous tungsten halide, gaseous hydrogen and gaseous silane. CONSTITUTION:The substrate 18 constituted by forming by oxidizing the surface of Si and forming an insulating film consisting of SiO2 is imposed on a substrate stage 17 contg. a heater in a reaction vessel 13 and thereafter the inside of the vessel 13 is evacuated to a vacuum in an arrow A direction so that steam, etc., are thoroughly removed. The substrate 18 is then heated to a set temp. of about 380 deg.C. WF6, H2 and Si2H6 are supplied from raw material cylinders 1, 2, 3 into the chamber via flow regulators 10, 11, 12 and are mixed. The gaseous mixture is introduced as the gaseous raw material into the chamber. Laser light of about 193nm wavelength at which the above-mentioned gaseous WF6 absorbs light is irradiated from a laser light source 19 via an irradiation window 15 into the chamber 13. The thin W film having good adhesiveness is thus formed on the insulating film of the substrate 18.
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