| 摘要 |
PURPOSE:To implement sufficiently high electron mobility, in a semiconductor heterostructured superlattice, in which a plurality of different kinds of semiconductor material layers are repeatedly liminated and a periodic structure is provided, by making the thickness of each semiconductor material layer very thin, thereby obtaining modulation effect of the electron mobility. CONSTITUTION:A plurality of different kinds of semiconductor material layers L1, L2, L3...Ln comprise simple substances of 8 or less atomic layers including fractions or a binary compound semiconductor material. Said layers are alternately and repeatedly laminated on a substrate 1. A semiconductor layer 2 having a superlattice structure is grown by an MOCVD method or an MBE method so as to have a plurality of period layers M. All or part of electron running regions are formed in this way. A semiconductor device, in which the direction crossing said semiconductor material layers L1, L2, L3... is made to be the main electron running direction, is constituted. LO phonons are locally arranged by the superlattice structure comprising 8 or less atomic layers. The amount of the phonon movement is modulated, i.e., scattering probability with electrons is modulated, and the high-speed semiconductor device and the like can be implemented.
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