| 摘要 |
PURPOSE:To enable the realization of a stable heat resistance, by providing a high-melting metal silicide film which has a uniform film thickness and in which the concentration of impurities other than a high-melting metal is low, a barrier film whose main component is a high-melting metal, and an electrode film whose main component is aluminum. CONSTITUTION:A P-type base region 16 is formed selectively on the surface of an N-type epitaxial layer 12 formed on a semiconductor substrate, and then a first surface-protecting oxide film 14 is formed on the surface. Thereafter an opening 14B is provided selectively in the first surface-protecting oxide film 14, a polysilicon film 19 is connected thereon, arsenic is ion-implanted in the film, and subsequently heat treatment is applied to form a very shallow emitter diffusion region 18. A polysilicon film 27 is connected on the polysilicon film 19, and a polysilicon film thus formed to be in two layers overlapping each other 1mum thick is etched selectively to be left as it is outside the opening. Thereafter, a Ti-W alloy barrier film 23 having a film thickness of about 1,000Angstrom and an Al electrode film 24 are formed on a PtSi film 22B. By this method, a semiconductor device wherein the contact resistance of an electrode structure is low and which is excellent in heat resistance is realized. |
