发明名称 SEMICONDUCTOR WAFER SUPPORTING SUBSTRATE
摘要 PURPOSE:To bond uniformly and preferably by providing a plurality of fine through holes passing both flat surface of a supporting substrate at the substrate. CONSTITUTION:Fine holes 5 of 1mm in diameter passing both surfaces of a supporting substrate 4 with holes made of quartz glass of 0.5mm thick are formed, for example, at intervals of 5mm in lateral and longitudinal directions. The substrate 4 is, for example, bonded to a wafer 3 of GaAs (100) crystal of 0.15mum thick with resist as an adhesive 2. Excess adhesive is flowed to the holes 5, and the adhesive 2 between the wafer 3 and the substrate 4 is thinly and uniformly extended.
申请公布号 JPS61208842(A) 申请公布日期 1986.09.17
申请号 JP19850051153 申请日期 1985.03.14
申请人 NIPPON TELEGR & TELEPH CORP <NTT>;NIPPON DENSHI GIJUTSU KK 发明人 OWADA KUNIKI;SUEMUNE YASUTAKA
分类号 H01L21/683;H01L21/67;H01L21/68;(IPC1-7):H01L21/68 主分类号 H01L21/683
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