| 摘要 |
PURPOSE:To reduce a leakage current sharply, by forming a conductive buried region annularly inside a first buried region and by forming a second collector region through an epitaxial layer so that it extends at least to a part of a third buried region. CONSTITUTION:A horizontal transistor device is constructed of a P-type semiconductor substrate 101, a buried antimony region 102 of an opposite conductivity type, a buried region 103 formed outside the buried antimony region 102, a buried collector region 109 formed annularly, an N-type epitaxial layer 104, an insulating diffusion region 105 so formed as to extend to the buried insulating region 103 through the epitaxial layer 104, and a buried collector lead-out region 110 so formed as to extend at least to a part of the buried collector region 109 through the epitaxial layer 104. The holes injected from a P-type emitter region 106 which are not collected by a P-type collector region 107 are sucked up mostly by the buried collector region 109. According to this constitution, a current leaking out into the semiconductor substrate is reduced sharply. |
