METODO DI FABBRICAZIONE DI LEGHE AMORFE FOTOSENSIBILI DI GERMANIO E DISPOSITIVI OTTENUTI CON TALE METODO

摘要

A semiconductor material comprises amorphous Ge containing F (a- Ge: F). The material may also contain H, and may contain a bandgap adjusting element e.g. C or N. The material may be doped and may be utilised in Schottky, MIS, PIN and PN solar cells or in electrophotographic devices.