Process monitor and method thereof

摘要

A process monitor which is particularly useful for endpoint detection in plasma etching processes does not require the dedication of a test area on the wafer for endpoint detection and also obviates the need for wafer alignment. An improved optical window which does not significantly perturb the RF fields in the plasma chamber is also disclosed. The apparatus reflects laser energy off an area of the wafer comparable to the area of a typical die and extracts the necessary information from the resulting waveform by means of first and second time derivatives.