Lateral bidirectional notch FET with gates at non-common potentials

摘要

Lateral FET structure is disclosed for bidirectional power switching, including AC application. A notch extends downwardly from a top major surface to separate left and right source regions and left and right channel regions, and direct the drift region current path between the channels around the bottom of the notch. Split gate electrodes in the notch proximate the channels control bidirectional conduction, and are at non-common potentials in the OFF state to increase breakdown voltage. Self-shielding of the gates is also disclosed to further increase OFF state breakdown voltage.