| 摘要 |
PURPOSE:To evaluate a semiconductor-insulating interface by setting the source or drain potential of a first MISFET through the first MISFET with a gate region to be tested and second and third MISFETs sharing a source or a drain. CONSTITUTION:A MISFET to be tested is measured initially in such a manner that gate electrodes 3 and 4 for MISFETs are brought to an open state and voltage-capacitance are measured between a gate electrode 2 for the MISFET to be tested and a semiconductor substrate 9. Voltage sufficiently higher than the threshold is applied to the gate electrodes 3 and 4 for the MISFETs after the completion of measurement. A source or a drain 7 and 8 are brought to ground potential. The temperature of the MISFET to be tested is kept constant, a predetermined electric field is applied to the gate electrode 2, and the MISFET to be tested is held for a prescribed period. The MISFET to be tested is returned to room temperature after the prescribed period passes, and voltage is removed from the gate electrodes 2, 3, 4 for the MISFETs. Voltage- capacitance characteristics are measured between the gate electrode 2 for the MISFET to be tested and the semiconductor substrate 9, and compared with said characteristics.
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