MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To flatten a wiring on a contact hole part with a sharp step by filling the contact hole part with an aluminum film. CONSTITUTION:A contact hole 4 is drilled in an insulation film 3 formed on the silicon substrate 1. A tungsten film 5 is formed only on the bottom part of the hole 4. An Al film 6 is formed by chemical vapor phase deposition. A porous aluminum film 6' formed on the insulation film 3 is removed by plasma etching with chlorine gas utilizing the etching rate difference between the porous film 6' and the precise aluminum film 6 formed on the tungsten film 5. An aluminum film 7 for wiring is formed by sputtering and then patterned. With this constitution, the wiring on the contact hole 4 is made flat.