| 发明名称 |
Solar cell of amorphous silicon |
| 摘要 |
A PIN solar cell of amorphous silicon with a high photovoltaic conversion efficiency is provided, in which in the P type layer, the electric conductivity of a zone in contact with an electrode is higher than that of another zone in contact with the I type layer.
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| 申请公布号 |
US4612559(A) |
申请公布日期 |
1986.09.16 |
| 申请号 |
US19840587702 |
申请日期 |
1984.03.08 |
| 申请人 |
DIRECTOR GENERAL OF AGENCY OF INDUSTRIAL SCIENCE & TECHNOLOGY |
发明人 |
HITOTSUYANAGI, HAJIME;IGARASHI, TADASHI;ISHII, MASAYUKI;KOBAYASHI, TADAKAZU |
| 分类号 |
H01L31/0376;H01L31/075;(IPC1-7):H01L45/00 |
主分类号 |
H01L31/0376 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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