| 摘要 |
PURPOSE:To form a film by a cluster ion beam with good controllability at a high ionization rate by providing a means for exciting microwave plasma in a vacuum vessel and ionizing the clusters from a vacuum deposition material by making the combination use of a confinement effect by a magnetic field. CONSTITUTION:The vacuum deposition material 4 in a crucible 2 is ejected from a nozzle 6 for injection when said material is heated. The vacuum deposition material is overcooled by adiabatic expansion in this stage and is made into massive atoms or molecule groups (clusters). The microwave from a microwave generating source 7 induces the electron cyclotron resonance by the conditions controlled by electromagnetic coils 14, 14' when said microwave is introduced into the vacuum vessel 1, by which the plasma of high density and high energy is generated. The clusters collide against the electrons having the high energy in the stage when the clusters pass the plasma region. The probability that the atoms in the clusters are ionized is thus increased. Such cluster ions are accelerated by an accelerating electrode 15 and collide against the substrate 16. The prescribed film formation is thus realized.
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