| 摘要 |
PURPOSE:To obtain a semiconductor light-emitting device having a small junction capacity, high response time and desirably rapid modulation characteristics, by providing current blocking layers of low-concentration P<-> type InP on both sides of a striped region and in contact with a guide layer, an active layer and an upper clad layer. CONSTITUTION:A diffraction grating is formed in the direction of (011') on a P-type InP substrate 12. A guide layer 13, an active layer 14, an upper clad layer 15 and a protective layer 21 are formed successively on the diffraction grating. An SiO2 layer 22 is deposited in a stripe along the direction of (011). Using this layer 22 as a mask, chemical etching is performed to remove the protective layer 21, the upper clad layer 15, the active layer 14, the guide layer 13 and the superficial layer of the substrate 12. A current blocking layer 16 consisting of P<-> type InP which is ensured to have a low concentration is formed by means of the liquid-phase growth. The etching mask 22 and the protective layer 21 are removed and an insulation layer 17 of SiO2 for example is formed on the current blocking layer 16. A negative electrode 19 of AuSn alloy or the like is formed over the upper clad layer and the insulation layer 17, while a positive electrode 18 consisting of triple layers of Au, Pt and Ti is formed on the bottom face of the substrate 12.
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