发明名称 SPUTTERING DEVICE
摘要 PURPOSE:To form films of uniform thickness and quality on both surfaces of a disk and to increase the film forming speed by interposing the disk between two sputtering electrodes having targets and providing sealed magnetic field generating parts into the cavities of cathodes. CONSTITUTION:Magnetic flux generating mechanisms 8 are attached into the cavities 6 of the cathodes 5 attached via inside seals 7 to a supporting shaft 3. The targets 12 are attached to the surfaces of the cathodes 5 facing the disk 2 and outside seals 13 are provided to the outside circumferences thereof by which the sputtering electrodes 1, 1' are assembled. Water conduit pipes 14 are opened to the 1st and 2nd magnetic pole body 10, 11 sides of the targets 12 to cool the targets 12. The disk 2 is supported to the shaft 3 between the electrodes 1 and 1'. Plasma-like ions are accelerated by the high voltage impressed between anodes and the cathodes 5 and collide against the targets 12 when the tunnel-shaped magnetic field distributions are generated in the spaces of the surfaces of the targets 12 facing the disk 2 by the magnetic pole bodies 10, 11. The atoms driven from the targets 12 stick and deposit on the disk 2 and the thin films are formed thereon.
申请公布号 JPS61207575(A) 申请公布日期 1986.09.13
申请号 JP19850046560 申请日期 1985.03.11
申请人 HITACHI LTD 发明人 ABE KATSUO;KOBAYASHI HIDE;KAMEI TSUNEAKI;KATAOKA HIROYUKI
分类号 C23C14/36;C23C14/34;C23C14/35 主分类号 C23C14/36
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