| 摘要 |
PURPOSE:To form side walls of an oxide film precisely, by ion-implanting impurities into an insulating film while selecting the ion implanting energy so that the impurities can not be implanted into portions of the insulating film grown on the side face of the gate electrode. CONSTITUTION:After a channel stopper 102 and field oxide film 103 are grown on a P-type silicon substrate 101, a gate oxide film 104 is grown thereon, on which polycrystalline silicon diffused with N-type impurities is grown. Next, photo etching forms a gate electrode 105, and the surface of the gate electrode is oxidized to grow an oxide film 106. After phosphorus is ion-implanted to form an N-type impurity diffused layer 107 with a high resistance, an oxide film 108 is grown by a CVD method. By ion-implanting phosphorus, a phosphorus-added oxide film 109 is formed. Thereafter, anisotropic etching removes the phosphorus-added oxide film 109 to form side wall 110 of oxide films on the side faces of the gate electrode 105.
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