| 摘要 |
PURPOSE:To enable forming a planar type resistance contact which has low contact resistance with a non-alloy by annealing for a short time after implanting a Mg ion with specific acceleration energy. CONSTITUTION:A n<+> GaAs layer 25, a n-GaAs collector layer 24, a p<+> GaAs base layer 23, a n-GaAlAs emitter layer 22 and a n<++> GaAs layer 21 are sequentially grown on a semi-insulating GaAs substrate 26 using a molecular beam epitaxial method. Then, a photo resist 27 covers leaving a region which is to be mode as an emitter region and a window for implanting a Mg ion 28 is opened. After the implantation with 50 KeV or less acceleration energy, annealed for 3 seconds at 900 deg.C, a Mg atom is activated, then all the surface is again covered with the photo resist 27, the collector layer 24 is exposed by chemical etching, AuGe/Ni is vacuum-deposited as a collector electrode 30 and then alloyed. Then, AuGe/Ni and AuZn/Au are vacuum-deposited, an emitter electrode 31 and a base electrode 32 are formed, covered with the photo resist 27 and a B ion 33 is implanted for the separation of elements. |
