| 摘要 |
PURPOSE:To stabilize recording of information on a recording medium with low-toxic substances by providing a recording layer containing Si and Sn of less than a specific Si/Sn atomic ratio value on a base material. CONSTITUTION:A recording layer contains Si and Sn with a Sn/(Si+Sn) atomic ratio of 0.95 or less, preferably 0.05-0.95. If the atomic ratio exceeds 0.95, the recording layer of Si-Sn is hardly noncrystallized, whereby recording by changes in crystal conditions such as phase dislocation grain size changes of noncrystal-cyrstal system is impossible even when heat is applied to the recording layer. On the contrary, when the atomic ratio is smaller than 0.05, the crystallizing temperature becomes higher and recording requires much more heat energy. In recording the recording medium of information, light or heat energy is applied, or semiconductor laser is used as recording light in general. Phase dislocation is caused in noncrystal-crystal system by irradiation of recording light and recording is made. |
