| 摘要 |
PURPOSE:To suppress the increase in a threshold current and conversion of a lateral basic mode into multiple modes, by a structure, wherein both sides of an InGaAs(P) active layer are embedded by P-type InP embedding layers having large resistance values and the width of the InGaAs(P) active layer is made narrow. CONSTITUTION:On a P-type InP substrate 11, a P-type InP embedding layer 14, an N-type InP embedding layer 15 and a P-type InP embedding layer 16 are sequentially formed. A stripe shaped InGaAs(P) active layer is embedded at least in said three layers and the side surfaces are contacted with the lowest P-type embedding layer 14. By the above described means, the width of the InGaAs(P) active layer 12 can be made narrow. As a result, the threshold current is decreased, and a leaking current can be decreased. Furthermore, a lateral mode is stabilized.
|
