| 发明名称 |
Method for producing a semiconductor device using a chemical vapour deposition step. |
| 摘要 |
<p>A semiconductor device is produced in such a manner that light λ having a wavelength in a range of 400 to 1000 nm is irradiated on a substrate so as to excite bonding hand of a material gas into a vibrating condition, and a thin film - (405) is formed on the substrate (401) in accordance with a chemical vapor deposition method.</p> |
| 申请公布号 |
EP0194109(A2) |
申请公布日期 |
1986.09.10 |
| 申请号 |
EP19860301440 |
申请日期 |
1986.02.28 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
ITO, HITOSHI;MORIYA, TAKAHIKO |
| 分类号 |
H01L21/268;H01L21/285;H01L21/3205;H01L21/768;(IPC1-7):H01L21/268;H01L21/316 |
主分类号 |
H01L21/268 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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