| 发明名称 |
Method of depositing on a substrate a layer which consists substantially of silicon carbide. |
| 摘要 |
<p>A layer of SiC is deposited at a comparatively low temperature (700-1000 DEG C) and low pressure (25-125 Pa) from a gaseous mixture which comprises preferably SiH4 and C2H4 in a molar ratio of 0.4-4. The resulting layers are hard, adhere readily and are homogeneous.</p> |
| 申请公布号 |
EP0193998(A1) |
申请公布日期 |
1986.09.10 |
| 申请号 |
EP19860200336 |
申请日期 |
1986.03.04 |
| 申请人 |
N.V. PHILIPS' GLOEILAMPENFABRIEKEN |
发明人 |
JENSMA, JACOB PIETER C/O INT. OCTROOIBUREAU B.V.;VERSPUI, GERRIT C/O INT. OCTROOIBUREAU B.V. |
| 分类号 |
C01B31/36;C23C16/32;(IPC1-7):C23C16/32 |
主分类号 |
C01B31/36 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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