| 摘要 |
<p>A heterojunction bipolar transistor comprising a base layer (24) and a wide bandgap emitter layer (25,26), in which a portion of the base layer (24) is exposed and a base electrode (30) is formed thereon, and the active region of the emitter-base junction (24-25) is limited inside a semiconductor body by providing a base contact region (28) so that surface recombination current generation at the peripheral region of the junction is prevented and thus the emitter efficiency is improved.</p> |
